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IRL530 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
封装:
TO-220
描述:
先进的功率MOSFET Advanced Power MOSFET
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8
标记信息在P8
技术参数、封装参数在P1
电气规格在P2
导航目录
IRL530数据手册
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IRL530N
HEXFET
®
Power MOSFET
PD - 91348C
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.10Ω
I
D
= 17A
T
O
-22
0
AB
1/09/04
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 17
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 12 A
I
DM
Pulsed Drain Current 60
P
D
@T
C
= 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy 150 mJ
I
AR
Avalanche Current 9.0 A
E
AR
Repetitive Avalanche Energy 7.9 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.9
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
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