Datasheet 搜索 > MOS管 > Infineon（英飞凌） > IRLML9301TRPBF 数据手册 > IRLML9301TRPBF 产品修订记录 1/2 页
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IRLML9301TRPBF 产品修订记录 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
SOT-23-3
描述:
P 通道功率 MOSFET 最大 7A，InfineonInfineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。### MOSFET 晶体管，Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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IRLML9301TRPBF数据手册
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若手册格式错乱，请下载阅览PDF原文件
101 North Sepulveda Boulevard, El Segundo, California, 90245, USA Telephone: +1 310 726 8000 www.irf.com
Date: October 23, 2013
PCN Reference: S091813 – 42C2
PCR Reference: 42
Product Reference: MOSFET
To Our Valued Customer:
As always we appreciate your use of International Rectifier semiconductor products. Our
commitment to customer satisfaction and continuous improvement is demonstrated by our
change plans to enhance capacity, quality and reliability. This notice is to inform you of the
following change:
Type of Change Notification:
Backend wafer processing
Description of Change:
Backend processing including back grind, back metal and probe will be done at an alternate
International Rectifier facility.
Reason for the Change:
Capacity transfer
Effect Date:
January 22, 2014
International Rectifier will consider this change approved and will implement it by the effective
date unless specific conditions of acceptance or data requests are provided in writing within 30
days of receipt of this notice. Please submit conditions of acceptance and data requests to the
PCN coordinator listed at the end of this notice.
Process Change Notification
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