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M29W640FT70N6E
器件3D模型
150.68
导航目录
  • 典型应用电路图在P8P11
  • 型号编码规则在P46
  • 封装信息在P46
  • 技术参数、封装参数在P34
  • 型号编号列表在P34
M29W640FT70N6E数据手册
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September 2008 Rev 8 1/71
1
M29W640FT
M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)
3V Supply Flash Memory
Feature summary
Supply voltage
–V
CC
=
2.7V to 3.6V for Program, Erase,
Read
–V
PP
=12 V for Fast Program (optional)
Asynchronous Random/Page Read
Page Width: 4 Words
Page Access: 25ns
Random Access: 60ns, 70ns
Programming time
–10μs per Byte/Word typical
4 Words / 8 Bytes Program
135 Memory Blocks
1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom location)
127 Main Blocks, 64 KBytes each
Program/Erase Controller
Embedded Byte/Word Program algorithms
Program/Erase Suspend and Resume
Read from any Block during Program
Suspend
Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
Faster Production/Batch Programming
V
PP
/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
64-bit Security Code
Extended Memory Block
Extra block used as security block or to store
additional information
Low power consumption
Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic Signature
Manufacturer Code: 0020h
ECOPACK
®
packages
FBGA
TSOP48 (N)
12 x 20mm
TFBGA48 (ZA)
6x8mm
Table 1. Device Codes
Root Part Number Device Code
M29W640FT 22EDh
M29W640FB 22FDh
www.Numonyx.com

M29W640FT70N6E 数据手册

Micron(镁光)
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M29W640FT70N6 数据手册

Micron(镁光)
MICRON  M29W640FT70N6E  闪存, 引导块, 64 Mbit, 8M x 8位 / 4M x 16位, CFI, 并行, TSOP, 48 引脚
ST Microelectronics(意法半导体)
64兆位(8MB X8或X16 4Mb的,页,引导块) 3V供应闪存 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
Micron(镁光)
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