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M29W640FT70N6E 其他数据使用手册 - Micron(镁光)
制造商:
Micron(镁光)
分类:
Flash芯片
封装:
TSOP-48
描述:
MICRON M29W640FT70N6E 闪存, 引导块, 64 Mbit, 8M x 8位 / 4M x 16位, CFI, 并行, TSOP, 48 引脚
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M29W640FT70N6E数据手册
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September 2008 Rev 8 1/71
1
M29W640FT
M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)
3V Supply Flash Memory
Feature summary
■ Supply voltage
–V
CC
=
2.7V to 3.6V for Program, Erase,
Read
–V
PP
=12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
■ Programming time
–10μs per Byte/Word typical
– 4 Words / 8 Bytes Program
■ 135 Memory Blocks
– 1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom location)
– 127 Main Blocks, 64 KBytes each
■ Program/Erase Controller
– Embedded Byte/Word Program algorithms
■ Program/Erase Suspend and Resume
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ V
PP
/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ Common Flash Interface
– 64-bit Security Code
■ Extended Memory Block
■ Extra block used as security block or to store
additional information
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
■ Electronic Signature
– Manufacturer Code: 0020h
■ ECOPACK
®
packages
FBGA
TSOP48 (N)
12 x 20mm
TFBGA48 (ZA)
6x8mm
Table 1. Device Codes
Root Part Number Device Code
M29W640FT 22EDh
M29W640FB 22FDh
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