Datasheet 搜索 > 电感 > Taiyo Yuden（太诱） > MBKK1608T4R7M 数据手册 > MBKK1608T4R7M 其他数据使用手册 4/12 页
器件3D模型￥ 0.032
MBKK1608T4R7M 其他数据使用手册 - Taiyo Yuden（太诱）
制造商:
Taiyo Yuden（太诱）
分类:
电感
封装:
0603
描述:
电感器, MCOIL 高电流, 4.7UH
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
应用领域在P1
电气规格在P1
导航目录
MBKK1608T4R7M数据手册
Page:
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4
技术信息/TechnicalInformation
FP75R12KT4_B11
IGBT-模块
IGBT-modules
preparedby:AS
approvedby:RS
dateofpublication:2013-10-29
revision:3.0
IGBT,制动-斩波器/IGBT,Brake-Chopper
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage
T
vj
= 25°C V
CES
1200 V
连续集电极直流电流
ContinuousDCcollectorcurrent
T
C
= 95°C, T
vj max
= 175°C I
C nom
50 A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
t
P
= 1 ms I
CRM
100 A
总功率损耗
Totalpowerdissipation
T
C
= 25°C, T
vj max
= 175 P
tot
280 W
栅极－发射极峰值电压
Gate-emitterpeakvoltage
V
GES
+/-20 V
特征值/CharacteristicValues
min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage
I
C
= 50 A, V
GE
= 15 V
I
C
= 50 A, V
GE
= 15 V
I
C
= 50 A, V
GE
= 15 V
V
CE sat
1,85
2,15
2,25
2,15
V
V
V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
栅极阈值电压
Gatethresholdvoltage
I
C
= 1,60 mA, V
CE
= V
GE
, T
vj
= 25°C V
GEth
5,2 5,8 6,4 V
栅极电荷
Gatecharge
V
GE
= -15 V ... +15 V Q
G
0,38 µC
内部栅极电阻
Internalgateresistor
T
vj
= 25°C R
Gint
4,0 Ω
输入电容
Inputcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
ies
2,80 nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
res
0,10 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C I
CES
1,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C I
GES
100 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
I
C
= 50 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 15 Ω
t
d on
0,16
0,17
0,17
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
上升时间(电感负载)
Risetime,inductiveload
I
C
= 50 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 15 Ω
t
r
0,03
0,04
0,04
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
I
C
= 50 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 15 Ω
t
d off
0,33
0,43
0,45
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
下降时间(电感负载)
Falltime,inductiveload
I
C
= 50 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 15 Ω
t
f
0,08
0,15
0,17
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
I
C
= 50 A, V
CE
= 600 V, L
S
= 20 nH
V
GE
= ±15 V
R
Gon
= 15 Ω
E
on
5,70
7,70
8,40
mJ
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse
I
C
= 50 A, V
CE
= 600 V, L
S
= 20 nH
V
GE
= ±15 V
R
Goff
= 15 Ω
E
off
2,80
4,30
4,80
mJ
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
短路数据
SCdata
V
GE
≤ 15 V, V
CC
= 800 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
180
A
T
vj
= 150°C
t
P
≤ 10 µs,
结－外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT R
thJC
0,54 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
0,245 K/W
在开关状态下温度
Temperatureunderswitchingconditions
T
vj op
-40 150 °C
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