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MJE15029 其他数据使用手册 - Multicomp
制造商:
Multicomp
分类:
双极性晶体管
封装:
TO-220
描述:
MULTICOMP MJE15029. 双极晶体管
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MJE15029数据手册
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V1.023/04/13
Bipolar Transistor
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Collector-Emitter Voltage V
CEO
45
VCollector-Base Voltage V
CES
45
Emitter-Base Voltage V
EBO
5
Continuous Collector Current I
C
10 A
Base Current I
B
2 A
Total Device Dissipation at T
c
= 25°C
Derate above 25°C
P
D
50
0.4
W
W/°C
Operating and Storage
Junction Temperature Range
T
j
, T
stg
-55 to +150 °C
Description:
Plastic PNP TO-220 silicon power transistor is designed
for various specic and general purpose applications
such as output and driver stages of ampliers operating
at frequencies from DC to greater than 1MHz series shunt
and switching regulators low and high frequency inverters/
converters and many others.
PNP
Features:
• Very low collector saturation voltage
• Excellent linearity
• Fast switching
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector
Electrical Characteristics (T
a
= 25°C unless otherwise specied)
Parameter Symbol Test Conditions Min. Max. Unit
OFF Characteristics
Collector - Emitter Breakdown Voltage V
(BR)CEO
I
C
=30mA, I
B
=0 45 - V
Collector Cut-Off Current I
CES
V
CE
=45V, V
BE
=0 - 10
μA
Emitter Cut-Off Current I
EBO
V
EB
=5V, I
C
=0 - 100
ON Characteristics
DC Current Gain h
FE
V
CE
=1V, I
C
=2A 35 - -
V
CE
=1V, I
C
=4A 20 - -
Collector - Emitter Saturation Voltage V
CE(sat)
I
C
=8A, I
B
=800mA - 1
V
Base - Emitter Saturation Voltage V
BE(sat)
I
C
=8A, I
B
=800mA 1.5
Emitter
3
2
Collector
1
Base
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