Web Analytics
Datasheet 搜索 > TVS二极管 > ON Semiconductor(安森美) > SBAT54XV2T1G 数据手册 > SBAT54XV2T1G 其他数据使用手册 1/5 页
SBAT54XV2T1G
器件3D模型
0.501
导航目录
  • 封装尺寸在P4
  • 焊盘布局在P4
  • 型号编码规则在P1P5
  • 标记信息在P1P4P5
  • 封装信息在P1
  • 技术参数、封装参数在P1
  • 应用领域在P1
  • 电气规格在P2
  • 型号编号列表在P1
SBAT54XV2T1G数据手册
Page:
of 5 Go
若手册格式错乱,请下载阅览PDF原文件
© Semiconductor Components Industries, LLC, 2017
August, 2018 − Rev. 12
1 Publication Order Number:
BAT54XV2T1/D
BAT54XV2
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mA
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Forward Current (DC) I
F
200 Max mA
Non−Repetitive Peak Forward
Current, t
p
< 10 msec
I
FSM
600 mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
I
FRM
300 mA
Thermal Resistance,
Junction−to−Ambient
R
JA
635 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to 125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Minimum Pad.
30 VOLT
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
CATHODE
2
ANODE
www.onsemi.com
SOD−523
CASE 502
1
2
1
Device Package Shipping
ORDERING INFORMATION
MARKING DIAGRAM
BAT54XV2T1G SOD−523
(Pb−Free)
3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
JV = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
JVM G
G
BAT54XV2T5G SOD−523
(Pb−Free)
8000 / Tape &
Reel
SBAT54XV2T1G SOD−523
(Pb−Free)
3000 / Tape &
Reel
SBAT54XV2T5G SOD−523
(Pb−Free)
8000 / Tape &
Reel

SBAT54XV2T1G 数据手册

ON Semiconductor(安森美)
4 页 / 0.05 MByte
ON Semiconductor(安森美)
5 页 / 0.11 MByte
ON Semiconductor(安森美)
2 页 / 0.05 MByte
ON Semiconductor(安森美)
4 页 / 0.11 MByte

SBAT54XV2T1 数据手册

ON Semiconductor(安森美)
肖特基势垒二极管极快的开关速度 Schottky Barrier Diodes Extremely Fast Switching Speed
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件