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SG2003J 其他数据使用手册 - Microsemi（美高森美）
制造商:
Microsemi（美高森美）
分类:
双极性晶体管
封装:
CDIP-16
描述:
高压中等电流驱动器阵列 HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
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SG2003J数据手册
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Rev 1.3b 4/7/2005 Microsemi Inc.
Copyright 1997 11861 Western Avenue
∞ ∞
∞ ∞
∞ Garden Grove, CA 92841
1 (714) 898-8121
∞∞
∞∞
∞ FAX: (714) 893-2570
DESCRIPTION
The SG2000 series integrates seven NPN Darlington pairs with
internal suppression diodes to drive lamps, relays, and solenoids in
many military, aerospace, and industrial applications that require
severe environments. All units feature open collector outputs with
greater than 50V breakdown voltages combined with 500mA
current carrying capabilities. Five different input configurations
provide optimized designs for interfacing with DTL, TTL, PMOS, or
CMOS drive signals. These devices are designed to operate from
-55°C to 125°C ambient temperature in a 16 pin dual in line ceramic
(J) package and 20 pin Leadless Chip Carrier (LCC). The plastic
dual in–line (N) is designed to operate over the commercial
temperature range of 0°C to 70°C.
FEATURES
••
••
• Seven npn Darlington pairs
••
••
• -55°C to 125°C ambient operating temperature range
••
••
• Collector currents to 600mA
••
••
• Output voltages from 50V to 95V
••
••
• Internal clamping diodes for inductive loads
••
••
• DTL, TTL, PMOS, or CMOS compatible inputs
••
••
• Hermetic ceramic package
HIGH RELIABILITY FEATURES
♦♦
♦♦
♦ Available to MIL-STD-883 and DESC SMD
♦♦
♦♦
♦ MIL-M38510/14101BEA - JAN2001J
♦♦
♦♦
♦ MIL-M38510/14102BEA - JAN2002J
♦♦
♦♦
♦ MIL-M38510/14103BEA - JAN2003J
♦♦
♦♦
♦ MIL-M38510/14104BEA - JAN2004J
♦♦
♦♦
♦ Radiation data available
♦♦
♦♦
♦ LMI level "S" processing available
HIGH VOLTAGE MEDIUM
CURRENT DRIVER ARRAYS
PARTIAL SCHEMATICS
SG2000 Series
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