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SI3456CDV-T1-E3数据手册
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Vishay Siliconix
Si3456CDV
Document Number: 69933
S09-0530-Rev. B, 06-Apr-09
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• HDD
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
d
Q
g
(Typ.)
30
0.034 at V
GS
= 10 V
7.8
4 nC
0.052 at V
GS
= 4.5 V
6.3
Marking Code
AP XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3456CDV-T1-E3 (Lead (Pb)-free)
Si3456CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
T
SO
P-6
Top View
6
4
1
2
3
5
3 mm
2.85 mm
D
D
D
D
S
G
(1, 2, 5, 6)
(3)
(4)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on T
C
= 25 °C.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
7.7
A
T
C
= 70 °C
6.2
T
A
= 25 °C
6.1
a, b
T
A
= 70 °C
4.9
a, b
Pulsed Drain Current I
DM
20
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
2.9
T
A
= 25 °C
1.7
a, b
Maximum Power Dissipation
T
C
= 25 °C
P
D
3.3
W
T
C
= 70 °C
2.1
T
A
= 25 °C
2
a, b
T
A
= 70 °C
1.3
a, b
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, c
t ≤ 5 s R
thJA
53 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady State R
thJF
32 38
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