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SI5515DC-T1-GE3 其他数据使用手册 - Vishay Siliconix
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SI5515DC-T1-GE3数据手册
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4
Document Number: 72221
S10-0547-Rev. C, 08-Mar-10
Vishay Siliconix
Si5515DC
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
20
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
10
- 0.4
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.02
0.04
0.06
0.08
0.10
012345
I
D
= 4.4 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 2 A
0
30
50
10
20
Power (W)
Time (s)
40
1 100 6001010
-1
10
-2
10
-4
10
-3
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
DC
0.1
I
D(on)
Limited
*
DS(on)
Limited by R
BVDSS Limited
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specied
- Drain Current (A)
I
D
I
DM
Limited
P(t) = 1
P(t) = 10
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