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SI9945BDY-T1-GE 其他数据使用手册 - Vishay Semiconductor（威世）
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SI9945BDY-T1-GE数据手册
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Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
www.vishay.com
3
Vishay Siliconix
Si9945BDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
10
12
14
16
18
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
GS
= 10 thru 4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.040
0.045
0.050
0.055
0.060
0.065
0.070
0.075
0.080
0 2 4 6 8 101214161820
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (mΩ)
0
2
4
6
8
10
03691215
V
DS
= 30 V
I
D
= 4.3 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
200
400
600
800
1000
0 102030405060
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 4.3 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
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