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STR2P3LLH6 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
SOT-23-3
描述:
P 沟道 STripFET™ 功率 MOSFET，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
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STR2P3LLH6数据手册
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Electrical characteristics
STR2P3LLH6
4/11
DocID024613 Rev 3
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4: On /off states
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0, I
D
= -250 µA
-30
V
I
DSS
Zero gate voltage drain current
V
GS
= 0,
V
DS
= -30 V, T
J
= 125 °C
-1
µA
I
GSS
Gate body leakage current
V
GS
= 0, V
GS
= ±20 V
-100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= -250 µA
-1
-2.5
V
R
DS(on)
Static drain-source
on-resistance
V
GS
= -10 V, I
D
= -1 A
V
GS
= -4.5 V, I
D
= -1 A
0.048
0.075
0.056
0.09
Ω
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
C
iss
Input capacitance
V
DS
= -25 V, f=1 MHz
V
GS
= 0
-
639
-
pF
C
oss
Output capacitance
-
79
-
C
rss
Reverse transfer capacitance
-
52
-
Q
g
Total gate charge
V
DD
= -15 V, I
D
= -2 A
V
GS
= -4.5 V
-
6
-
nC
Q
gs
Gate-source charge
-
1.9
-
Q
gd
Gate-drain charge
-
2.1
-
Table 6: Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on delay time
V
DD
= -15 V, I
D
= -2 A,
R
G
= 4.7 Ω, V
GS
= -10 V
-
5.4
-
ns
t
r
Rise time
-
5
-
t
d (off)
Turn-off delay time
-
19.2
-
t
f
Fall time
-
3.4
-
Table 7: Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
SD
(1)
Forward on voltage
I
SD
= -2 A, V
GS
= 0
-
-
-1.1
V
t
rr
Reverse recovery time
I
SD
= -2 A,
di/dt = 100 A/µs,
V
DD
= -24 V, T
J
= 150 °C
-
-
11.2
ns
Q
rr
Reverse recovery charge
-
-
3.5
nC
I
RRM
Reverse recovery current
-
-
-0.6
A
Notes:
(1)
Pulsed: pulse duration=300µs, duty cycle 1.5%
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