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TC75S56FE 产品封装文件 - Toshiba（东芝）
制造商:
Toshiba（东芝）
封装:
SOT-553
描述:
TC75S56FE SOT-553/ESV marking/标记 TC
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TC75S56FE数据手册
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This is information on a product in full production.
July 2014 DocID18415 Rev 5 1/16
STL56N3LLH5
N-channel 30 V, 0.0076 Ω typ., 56 A STripFET™ H5
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet — production data
Figure 1. Internal schematic diagram
Features
• Low on-resistance R
DS(on)
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’ STripFET™
H5 technology. The device has been optimized to
achieve very low on-state resistance, contributing
to a FoM that is among the best in its class.
PowerFLAT™ 5x6
1
2
3
4
$0Y
'
*
6
Order code V
DS
R
DS(on)
max I
D
STL56N3LLH5 30 V 0.009 Ω 56 A
Table 1. Device summary
Order code Marking Package Packaging
STL56N3LLH5 56N3LH5 PowerFLAT™ 5x6 Tape and reel
www.st.com
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