Web Analytics
Datasheet 搜索 > RAM芯片 > Integrated Silicon Solution(ISSI) > IS61LV25616AL-10BI 数据手册 > IS61LV25616AL-10BI 产品设计参考手册 1/2 页
IS61LV25616AL-10BI
器件3D模型
5.246
导航目录
  • 型号编号列表在P1P2
IS61LV25616AL-10BI数据手册
Page:
of 2 Go
若手册格式错乱,请下载阅览PDF原文件
www.issi.com Part Decoder 2014
SRAM Part Decoder
QUAD/P, DDR-ll/P Part Decoder
IS 61 WV 12816 DBLL - 10 T L I
• SRAM Product Family
61/63 = High Speed
62 = Low Power
64 = Automotive High Speed
65 = Automotive Low Power
66 = Pseudo SRAM
67 = Automotive PSRAM
• Density/Configuration
Example:
25636 = 256Kx36
51216 = 512Kx16
1M36 = 1Mx36
• Die Rev/Voltage Range
Die Rev
Blank-Z
Voltage Range (WV)
ALL = 1.65V to 2.2V
BLL = 2.5V to 3.6V
• Solder Type
Blank = SnPb
L = Lead-free (RoHS Compliant)
Package Code
B, B1, B2, B3 = BGA
CT = Copper TSOP
H = sTSOP
J = 300-mil SOJ
K = 400-mil SOJ
LQ = LQFP
M, M3, = BGA
Q = SOP
T/T2 = TSOP
TQ = TQFP
U = SOP
Speed (ns or MHz)
Example:
8 = 8ns
200 = 200MHz
• Temp. Grade
Blank = Commercial Grade ( 0C to +70°C )
I = Industrial Grade ( -40C to +85°C )
A1 = Automotive Grade (-40C to +85°C)
A2 = Automotive Grade (-40C to +105°C)
A3 = Automotive Grade (-40C to +125°C)
• Operating Voltage Range/ Product Type
Asynchronous SRAM
C = 5V
LV = 3.3V
WV = Wide Voltage Range
Synchronous SRAM
P = Pipeline, F = Flowthrough
NLP/NLF/NVP/NVF = No-Wait Option
LP/LF: Vcc = 3.3V, VccQ = 3.3V/2.5V
VP/VF: Vcc = 2.5V, VccQ = 2.5V
QD = QUAD, DD = DDR-II Common I/O: Vcc = 1.8V , VccQ = 1.8V/1.5V
ISSI prefix
Product Family
Operating Voltage Range/Product Type
Density/Configuration
Die Rev/Voltage Range
Temp. Grade
Solder Type
Package Code
Speed (ns or MHz)
SRAM Part Decoder
IS 61 QDP 2 B4 4M18 A1 - 333 M3 L I
• Product Type
QD = QUAD
QDP = QUADP
DD = DDR-II, Common I/O
DDP = DDR-IIP, Common I/O
• Configuration
51236 = 512Kb x 36
1M18 = 1Mb x 18
1M36 = 1Mb x 36
2M18 = 2Mb x 18
2M36 = 2Mb x 36
4M18 = 4Mb x 18
• Read Latency (RL):
For QUAD/DDR-II devices:
Blank = 1.5 clock cycles
For QUADP/DDR-IIP devices:
Blank = 2.5 clock cycles
2 = 2.0 clock cycles
• ODT Option (if supported):
A: No ODT
A1: ODT Option 1
If ODT = HIGH or floating, a high range
termination resistance is selected.
If ODT = LOW, a low range
termination resistance is selected.
A2: ODT Option 2
If ODT = HIGH, a high range
termination resistance is selected.
If ODT = LOW or floating, ODT is disabled
• Speed
Example: 250 = 250MHz
• Package Code
B4 = 165 ball BGA (13 x 15 mm)
M3 = 165-ball BGA (15 x 17 mm)
• RoHS Version
Blank = Leaded
L = Lead-free
• Temperature Range
Blank = Commercial (0C to 70°C)
I = Industrial (-40C to 85°C)
• Burst Type:
B2 = Burst 2
B4 = Burst 4
ISSI prefix
Product Type
Read Latency
Burst Type
Configuration
ODT Option
Temp. Grade
RoHS Version
Package Code
Speed (MHz)

IS61LV25616AL-10BI 数据手册

Integrated Silicon Solution(ISSI)
16 页 / 0.33 MByte
Integrated Silicon Solution(ISSI)
2 页 / 0.04 MByte
Integrated Silicon Solution(ISSI)
17 页 / 0.15 MByte

IS61LV25616AL10 数据手册

Integrated Silicon Solution(ISSI)
RAM,ISSI**ISSI** 静态 RAM 产品使用高性能 CMOS 技术。 提供各种静态 RAM,其中包括 5V 高速异步 SRAM、高速低功率异步 SRAM、5V 低功率类型异步 SRAM、超低功率 CMOS 静态 RAM 和 PowerSaverTM 低功率异步 SRAM。 ISSI SRAM 设备提供各种电压、存储器大小和不同的组织。 它们适用于以下应用,如 CPU 缓存、嵌入式处理器、硬盘和工业电子开关。 电源:1.8V/3.3V/5V 提供的封装:BGA、SOJ、SOP、sTSOP、TSOP 提供的配置选择:x8 和 x16 ECC 功能可用于高速异步 SRAM ### SRAM(静态随机存取存储器)
Integrated Silicon Solution(ISSI)
INTEGRATED SILICON SOLUTION (ISSI)  IS61LV25616AL-10TL  芯片, 存储器, SRAM, 4MB, 10NS, TSOP-2-44
Integrated Silicon Solution(ISSI)
SRAM, 4 Mbit, 256K x 16位, 3.135V 至 3.63V, Mini BGA, 48 引脚, 10 ns
Integrated Silicon Solution(ISSI)
Integrated Silicon Solution(ISSI)
Integrated Silicon Solution(ISSI)
Integrated Silicon Solution(ISSI)
Integrated Silicon Solution(ISSI)
Integrated Silicon Solution(ISSI)
Integrated Silicon Solution(ISSI)
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件