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Overview
1 Overview
The ISO5852S is a 5.7-kV
RMS
, reinforced isolated, IGBT gate driver with split outputs, OUTH and OUTL,
providing 2.5-A source and 5-A sink currents. The input side operates from a single 2.25-V to 5.5-V
supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two
complementary CMOS inputs control the output state of the gate driver. The short propagation time
assures accurate control of the output stage.
An internal desaturation detection recognizes when the IGBT is in an overload condition. Upon a
desaturation detect, a Mute logic immediately blocks the output of the isolator and initiates a soft-turn-off
procedure which disables, OUTH, and pulls OUTL to low over a time span of 2 μs. When OUTL reaches
2 V with respect to the most negative supply potential, V
EE2
, the gate driver output is pulled hard to V
EE2
potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the
input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. The
FLT output condition is latched and can be reset only after RDY goes high, through a low-active pulse at
the RST input.
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp
to V
EE2
. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink
across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient
conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits
monitoring the input and output supplies. If either side have insufficient supply, the RDY output goes low,
otherwise the output is high.
2 EVM Setup and Precautions
2.1 Before You Begin
The following warnings and cautions are noted for the safety of anyone using or working close to the
ISO5852S EVM. Observe all safety precautions.
Warning Warning Hot surface. Contact may cause burns. Do not touch.
Danger High The ISO5852S EVM does not have an isolation boundary. If you apply
Voltage high voltage to this board, all terminals should be considered high voltage.
spacer
Electric shock is possible when connecting the board to live wire. The
board should be handled with care by a professional.
spacer
For safety, use of isolated test equipment with overvoltage and
overcurrent protection is highly recommended.
3
SLLU207AAugust 2014Revised September 2015 ISO5852S Evaluation Module
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Copyright © 2014–2015, Texas Instruments Incorporated

ISO5852SEVM 数据手册

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ISO5852 数据手册

TI(德州仪器)
TEXAS INSTRUMENTS  ISO5852SDWR  芯片, 隔离晶体管, IGBT/场效应管, MOSFET驱动器, 5.5V, SOIC
TI(德州仪器)
具有分离输出和保护功能的 2.5A/5A、5.7kV RMS 单通道隔离式栅极驱动器 16-SOIC -40 to 125
TI(德州仪器)
MOSFET & IGBT驱动器, AEC-Q100, 2.25 V至5.5 V电源, 2.5 A & 5 A输出, 110 ns继电器, SOIC-16
TI(德州仪器)
TEXAS INSTRUMENTS  ISO5852SEVM  评估板, IGBT门驱动器, 2.5A源/5A漏
TI(德州仪器)
具有保护功能的汽车类 2.5A/5A、5.7kV RMS 单通道隔离式栅极驱动器 16-SOIC -40 to 125
TI(德州仪器)
ISO5852S-Q1 高 CMTI 2.5A/5A 隔离式 IGBT、MOSFET 栅极驱动器,具有分离输出
TI(德州仪器)
ISO5852S 高 CMTI 2.5A/5A 隔离式 IGBT、MOSFET 栅极驱动器,具有分离输出
TI(德州仪器)
ISO5852S-EP CMTI 较高的 2.5A/5A 隔离式 IGBT、MOSFET 栅极驱动器
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