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LIS3MDLTR
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LIS3MDLTR数据手册
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PCB design guidelines TN0018
4/9 DocID12707 Rev 6
2 PCB design guidelines
PCB land and solder mask general recommendations are shown in Figure 1. Refer to the
device datasheet for pad count, size and pitch.
It is recommended to open the solder mask external to the PCB land;
It is strongly recommended not to place any structure on the top metal layer
underneath the sensor (on the same side of the board). This must be defined as a
keepout area.
Traces connected to pads should be as much symmetric as possible. Symmetry and
balance for pad connection will help component self-alignment and will lead to better
control of solder paste reduction after reflow;
For optimal performance of the device, it is strongly recommended to place screw
mounting holes at a distance greater than 2 mm from the sensor.
If present, the pin #1 indicator must be left unconnected to ensure proper device
functionality.
In order to prevent noise coupling and thermo-mechanical stress, following standard
industry design practices for component placement is advised.

LIS3MDLTR 数据手册

ST Microelectronics(意法半导体)
33 页 / 1.61 MByte
ST Microelectronics(意法半导体)
9 页 / 0.2 MByte
ST Microelectronics(意法半导体)
28 页 / 1.73 MByte
ST Microelectronics(意法半导体)
23 页 / 0.57 MByte
ST Microelectronics(意法半导体)
6 页 / 0.4 MByte
ST Microelectronics(意法半导体)
5 页 / 0.04 MByte

LIS3 数据手册

ST Microelectronics(意法半导体)
加速表 IC,STMicroelectronicsST MEMS 加速表包括模拟和数字传感器,具有高达 ±400g 加速满刻度和 1.71 到 3.6 V 的电源电压。 高级省电功能包括低功耗模式、自动唤醒功能和 FIFO 缓冲器,可用于存储数据,从而减少主机处理器负载和系统功耗。### 注库存号 111-6447 不用于汽车安全应用。### 加速表,STMicroelectronics
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STMICROELECTRONICS  LIS331HH  加速度计, MEMS, 3轴, 数字, X, Y, Z, ± 6g, ± 12g, ± 24g, 2.16 V, 3.6 V, LGA
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STMICROELECTRONICS  LIS3MDLTR  模块, MEMS, 三轴磁强计, 1.9 V, 3.6 V, LGA, 12 引脚
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