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REF3320AIDCKR 产品设计参考手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
电压基准芯片
封装:
SC-70-3
描述:
3.9レA， SC70-3 ，为30ppm / ΣC漂移参考电压 3.9レA, SC70-3, 30ppm/∑C Drift VOLTAGE REFERENCE
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P3Hot
典型应用电路图在P12P13P14
原理图在P10
封装尺寸在P20P21P22P24P25P26P30
焊盘布局在P31
标记信息在P20P21P22P23
封装信息在P19P20P21P22P23P24P25P26
技术参数、封装参数在P4
应用领域在P1P12P13P14P33
电气规格在P5P6P11P14
导航目录
REF3320AIDCKR数据手册
Page:
of 33 Go
若手册格式错乱，请下载阅览PDF原文件
REF3312
,
REF3318
,
REF3320
,
REF3325
,
REF3330
,
REF3333
SBOS392E –AUGUST 2007–REVISED OCTOBER 2014
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted).
(1)
MIN MAX UNIT
Input voltage 7.5 V
Voltage
Output voltage 5 V
Current Output short-circuit, I
SC
(2)
180 mA
Operating temperature –50 150 °C
Temperature
Junction temperature, T
J
150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) See the Power-Supply Recommendations section of this data sheet.
7.2 Handling Ratings
MIN MAX UNIT
T
stg
Storage temperature range –65 150 °C
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
(1)
–4000 4000
Electrostatic
V
(ESD)
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins
(2)
–1000 1000 V
discharge
Machine model (MM) –200 200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted).
MIN NOM MAX UNIT
V
IN
Supply input voltage
(1)
V
OUT
+ 0.2 5.5 V
I
OUT
Output current range –30 30 mA
(1) The minimum supply voltage for the REF3312 is 1.8 V.
7.4 Thermal Information
REF3325,
REF33xx
REF3330
THERMAL METRIC
(1)
UNIT
DCK (SC70) DBZ (SOT-23) RSE (UQFN)
3 PINS 3 PINS 8 PINS
R
θJA
Junction-to-ambient thermal resistance 279.7 313.1 61.2
R
θJC(top)
Junction-to-case (top) thermal resistance 136.3 144.0 32.6
R
θJB
Junction-to-board thermal resistance 56.9 109.3 16.0
°C/W
ψ
JT
Junction-to-top characterization parameter 11.0 18.2 1.3
ψ
JB
Junction-to-board characterization parameter 56.1 107.9 16.0
R
θJC(bot)
Junction-to-case (bottom) thermal resistance N/A N/A N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated
Product Folder Links: REF3312 REF3318 REF3320 REF3325 REF3330 REF3333
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