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TL4050A50QDCKR 产品设计参考手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
电压基准芯片
封装:
SC-70-5
描述:
精密微功耗并联型电压基准 PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE
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封装尺寸在P18P19P20P21P22P24P25P26P27
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TL4050A50QDCKR数据手册
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TL4050x25I ELECTRICAL CHARACTERISTICS
DV
Z
DI
Z
TL4050
SLOS486A – JUNE 2007 – REVISED AUGUST 2009 ........................................................................................................................................................
www.ti.com
at industrial temperature range, full range T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
TL4050A25I TL4050B25I TL4050C25I
PARAMETER TEST CONDITIONS T
A
UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Reverse
V
Z
breakdown I
Z
= 100 µ A 25 ° C 2.5 2.5 2.5 V
voltage
25 ° C – 2.5 2.5 – 5 5 – 13 13
Reverse
Δ V
Z
breakdown I
Z
= 100 µ A mV
Full
– 11 11 – 14 14 – 21 21
voltage tolerance
range
25 ° C 41 60 41 60 41 60
Minimum
I
Z,min
µ A
Full
cathode current
65 65 65
range
I
Z
= 10 mA 25 ° C ± 20 ± 20 ± 20
Average
temperature
I
Z
= 1 mA 25 ° C ± 15 ± 15 ± 15
coefficient of
α
VZ
ppm/ ° C
25 ° C ± 15 ± 15 ± 15
reverse
breakdown
I
Z
= 100 µ A
Full
± 50 ± 50 ± 50
voltage
range
25 ° C 0.3 0.8 0.3 0.8 0.3 0.8
I
Z,min
< I
Z
< 1 mA
Reverse
Full
1.2 1.2 1.2
breakdown
range
voltage change mV
25 ° C 2.3 6 2.3 6 2.3 6
with cathode
current change
1 mA < I
Z
< 15 mA
Full
8 8 8
range
I
Z
= 1 mA,
Reverse dynamic
Z
Z
f = 120 Hz, 25 ° C 0.3 0.3 0.3 Ω
impedance
I
AC
= 0.1 I
Z
I
Z
= 100 µ A,
e
N
Wideband noise 25 ° C 41 41 41 µ V
RMS
10 Hz ≤ f ≤ 10 kHz
Long-term
stability of t = 1000 h,
reverse T
A
= 25 ° C ± 0.1 ° C, 120 120 120 ppm
breakdown I
Z
= 100 µ A
voltage
Thermal
V
HYST
Δ T
A
= – 40 ° C to 125 ° C 0.7 0.7 0.7 mV
hysteresis
(1)
(1) Thermal hysteresis is defined as V
Z,25 ° C
(after cycling to – 40 ° C) – V
Z,25 ° C
(after cycling to 125 ° C).
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