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AUIRS21811STR
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AUIRS21811STR数据手册
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1
AN-978 RevD
Application Note AN-978
HV Floating MOS-Gate Driver ICs
(HEXFET is a trademark of International Rectifier)
Table of Contents
Page
Gate drive requirement of high-side devices............................................................... 2
A typical block diagram ............................................................................................... 3
How to select the bootstrap components.................................................................... 5
How to calculate the power dissipation in an MGD..................................................... 6
How to deal with negative transients on the V
s
pin ..................................................... 9
Layout and other general guidelines ........................................................................... 11
How to boost gate drive current to drive modules....................................................... 14
How to provide a continuous gate drive ...................................................................... 17
How to generate a negative gate bias......................................................................... 19
How to drive a buck converter..................................................................................... 22
Dual forward converter and switched reluctance motor drives ................................... 24
Full bridge with current mode control .......................................................................... 24
Brushless and induction motor drives ......................................................................... 26
Push-pull ..................................................................................................................... 27
High-side P-channel .................................................................................................... 27
Troubleshooting guidelines ......................................................................................... 28

AUIRS21811STR 数据手册

Infineon(英飞凌)
20 页 / 0.51 MByte
Infineon(英飞凌)
138 页 / 12.05 MByte
Infineon(英飞凌)
25 页 / 0.26 MByte
Infineon(英飞凌)
30 页 / 0.41 MByte
Infineon(英飞凌)
5 页 / 0.32 MByte

AUIRS21811 数据手册

Infineon(英飞凌)
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
Infineon(英飞凌)
INFINEON  AUIRS21811S  芯片, 驱动器, 高/低压侧, 8SOIC
International Rectifier(国际整流器)
International Rectifier(国际整流器)
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