Datasheet 搜索 > FET驱动器 > Infineon（英飞凌） > IR2302SPBF 数据手册 > IR2302SPBF 开发手册 2/30 页
器件3D模型￥ 9.186
IR2302SPBF 开发手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
FET驱动器
封装:
SOIC-8
描述:
INFINEON IR2302SPBF 双路芯片, MOSFET, 半桥, 5V-20V电源, 350mA输出, 200ns延迟, SOIC-8
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
原理图在P3P17
功能描述在P29
导航目录
IR2302SPBF数据手册
Page:
of 30 Go
若手册格式错乱，请下载阅览PDF原文件
www.irf.com
2
AN-978 RevD
1. GATE DRIVE REQUIREMENTS OF HIGH-SIDE DEVICES
The gate drive requirements for a power MOSFET or IGBT utilized as a high-side switch (the
drain is connected to the high voltage rail, as shown in Figure 1) driven in full enhancement (i.e.,
lowest voltage drop across its terminals) can be summarized as follows:
1. Gate voltage must be 10 V to 15 V higher than the source voltage. Being a high-side
switch, such gate voltage would have to be higher than the rail voltage, which is
frequently the highest voltage available in the system.
2. The gate voltage must be controllable from the logic, which is normally referenced to
ground. Thus, the control signals have to be level-shifted to the source of the high-
side power device, which, in most applications, swings between the two rails.
3. The power absorbed by the gate drive circuitry should not significantly affect the
overall efficiency.
Figure 1: Power MOSFET in the High-Side Configuration
With these constraints in mind, several techniques are presently used to perform this function, as
shown in principle in Table I (see pg. 29). Each basic circuit can be implemented in a wide
variety of configurations.
International Rectifier’s family of MOS-gate drivers (MGDs) integrate most of the functions
required to drive one high-side and one low-side power MOSFET or IGBT in a compact, high
performance package. With the addition of few components, they provide very fast switching
speeds, as shown in Table II (see pg. 30) for the IRS2110, and low power dissipation. They can
operate on the bootstrap principle or with a floating power supply. Used in the bootstrap mode,
they can operate in most applications from frequencies in the tens of Hz up to hundreds of kHz.
GATE
SOURCE
V
+
HIGH VOLTAGE RAIL
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