Datasheet 搜索 > MOS管 > Infineon（英飞凌） > IRF40H210 数据手册 > IRF40H210 开发手册 5/37 页
器件3D模型￥ 7.652
IRF40H210 开发手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
PQFN-8
描述:
IRF40H210 编带
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
IRF40H210数据手册
Page:
of 37 Go
若手册格式错乱，请下载阅览PDF原文件
Figure 2 IPB072N15N3 G - from MOSFET to thermal network
The network representation for the MOSFET is used to generate the Z
thJC
= f(time) graph provided inside our
datasheets, as summarized in Figure 3.
Figure 3 IPB072N15N3 G - from thermal network to Z
thJC
graph
To make use of the values for these (R
thi
, C
thi
) parameters, designers must use the level 3 model from the PSpice
files provided by Infineon. In Figure 4, the parametric values for IPB072N15N3 G are shown. For this MOSFET, the
thermal impact of the bond wires is negligible, and this is not included within the PSpice level 3 model.
The values for the R
thi
and C
thi
parameters are provided in Kelvin per Watt (K/W) and Watt-second per Kelvin
(W*s/K) respectively. Moreover, if, for example, we refer to the parameters for “Rth1” in Figure 4, “1.44m” and
“534.18u” correspond to 1.44 millikelvin per Watt and 534.18 microkelvin per Watt respectively. Similarly, for
“Cth6”, “190m” is equivalent to 190 milliwatt-second per Kelvin.
Some key facts about avalanche
2 Single pulse avalanche
Application Note 5 Version 1.0
2017-01-9
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
