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MMBT2369ALT1G
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MMBT2369ALT1G数据手册
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© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 5
1 Publication Order Number:
MMBT2369LT1/D
MMBT2369LT1,
MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
15 Vdc
CollectorEmitter Voltage V
CES
40 Vdc
CollectorBase Voltage V
CBO
40 Vdc
EmitterBase Voltage V
EBO
4.5 Vdc
Collector Current − Continuous I
C
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping
ORDERING INFORMATION
MMBT2369LT1 SOT−23 3000/Tape & Ree
l
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAMS
COLLECTOR
3
1
BASE
2
EMITTER
MMBT2369ALT1 SOT−23 3000/Tape & Ree
l
http://onsemi.com
xxx = M1J or 1JA
M = Date Code*
G = Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
MMBT2369ALT1G SOT−23
(Pb−Free)
3000/Tape & Ree
l
MMBT2369LT1G SOT−23
(Pb−Free)
3000/Tape & Ree
l
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOT−23
CASE 318
STYLE 6
1
2
1
3
xxx M G
G

MMBT2369ALT1G 数据手册

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MMBT2369ALT1 数据手册

ON Semiconductor(安森美)
开关晶体管NPN硅 Switching Transistors NPN Silicon
Motorola(摩托罗拉)
Leshan Radio(乐山无线电)
National Semiconductor(美国国家半导体)
ON Semiconductor(安森美)
ON SEMICONDUCTOR  MMBT2369ALT1G  单晶体管 双极, NPN, 15 V, 225 mW, 200 mA, 40 hFE
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