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2N4393 数据手册 - Central Semiconductor
制造商:
Central Semiconductor
分类:
JFET晶体管
封装:
TO-18
描述:
2N 系列 40 V 30 mA N 沟道 结场效应晶体管 - TO-18
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2N4393数据手册
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MMBF4391 / MMBF4392 / MMBF4393 — N-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4391 / MMBF4392 / MMBF4393 Rev. 1.3 2
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm
2
.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
Symbol Parameter Max. Unit
P
D
Total Device Dissipation 350 mW
Derate Above 25°C2.8mW/°C
R
θJA
Thermal Resistance, Junction-to-Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= 1.0 μA, V
DS
= 0 -30 V
I
GSS
Gate Reverse Current
V
GS
= -15 V, V
DS
= 0 -1.0 nA
V
GS
= -15 V, V
DS
= 0, T
A
= 150°C -0.2 μA
V
GS(off)
Gate-Source Cut-Off Voltage V
DS
= 20 V, I
D
= 1.0 nA
MMBF4391 -4.0 -10.0
VMMBF4392 -2.0 -5.0
MMBF4393 -0.5 -3.0
V
GS(f)
Gate-Source Forward Voltage I
G
= 1.0 mA, V
DS
= 0 1.0 V
I
D(off)
Drain Cut-Off Leakage Current
V
DS
= 20 V, V
GS
= -12 V MMBF4391 0.1
nAV
DS
= 20 V, V
GS
= -7.0 V MMBF4392 0.1
V
DS
= 20 V, V
GS
= -5.0 V MMBF4393 0.1
V
DS
= 20 V, V
GS
= -12 V,
T
A
= 150°C
MMBF4391 0.2
μA
V
DS
= 20 V, V
GS
= -7.0 V,
T
A
= 150°C
MMBF4392 0.2
V
DS
= 20 V, V
GS
= -5.0 V,
T
A
= 150°C
MMBF4393 0.2
On Characteristics
I
DSS
Zero-Gate Voltage Drain
Current
(4)
V
DS
= 20 V, V
GS
= 0
MMBF4391 50 150
mAMMBF4392 25 75
MMBF4393 5.0 30
V
DS(on)
Drain-Source On Voltage
I
D
= 12 mA, V
GS
= 0 MMBF4391 0.4
VI
D
= 6.0 mA, V
GS
= 0 MMBF4392 0.4
I
D
= 3.0 mA, V
GS
= 0 MMBF4393 0.4
r
DS(on)
Drain-Source On Resistance I
D
= 1.0 mA, V
GS
= 0
MMBF4391 30
ΩMMBF4392 60
MMBF4393 100
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