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ADS4449EVM数据手册
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1:2
50 :
1:1
Band-Pass Filter
Centered at
f
0
= 310 MHz
BW = 125 MHz
T1
T2
VCM
Device
0.1 PF
50 :
50 :
10 :
10 :
10 pF
27 nH
25 :
25 :
0.1 PF
0.1 PF
INP
INM
R
IN
C
IN
1:2
50 :
1:1
Band-Pass Filter
Centered at
f
0
= 185 MHz
BW = 125 MHz
T1
T2
VCM
Device
0.1 PF
100 :
100 :
10 :
10 :
10 pF
82 nH
25 :
25 :
68 :
68 :
120 nH
0.1 PF
0.1 PF
INP
INM
R
IN
C
IN
VCM
Device
0.1 PF
25 :
25 :
10 :
10 :
10 pF
27 nH
25 :
25 :
INP
INM
R
IN
C
IN
1:1
50 :
1:1
Band-Pass Filter
Centered at
f
0
= 310 MHz
BW = 125 MHz
T1
T2
0.1 PF
0.1 PF
43
ADS4449
www.ti.com
SBAS603A APRIL 2013REVISED JANUARY 2016
Product Folder Links: ADS4449
Submit Documentation FeedbackCopyright © 2013–2016, Texas Instruments Incorporated
Typical Application (continued)
Figure 55. Driving Circuit for a 50-Ω Source Impedance and Input Frequencies
in the Third Nyquist Zone
TI recommends terminating the drive circuit by a 50-Ω (or lower) impedance near the ADC for best performance.
However, in some applications higher impedances be required to terminate the drive circuit. Two example driving
circuits with 100-Ω differential termination are shown in Figure 56 and Figure 57. In these example circuits, the
1:2 transformer (T1) is used to transform the 50-Ω source impedance into a differential 100 Ω at the input of the
band-pass filter. In Figure 56, the parallel combination of two 68-Ω resistors and one 120-nH inductor and two
100-Ω resistors is used (100 Ω is the effective impedance in pass-band) for better performance.
Figure 56. Driving Circuit for a 100- Ω Source Impedance and Input Frequencies
in the Second Nyquist Zone
Figure 57. Driving Circuit for a 100- Ω Source Impedance and Input Frequencies
in the Third Nyquist Zone

ADS4449EVM 数据手册

TI(德州仪器)
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ADS4449 数据手册

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