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器件3D模型￥ 0.704
AO4614B 数据手册 - Alpha & Omega Semiconductor（万代半导体）
制造商:
Alpha & Omega Semiconductor（万代半导体）
分类:
MOS管
封装:
SOIC-8
描述:
二极管与整流器
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
功能描述在P1
技术参数、封装参数在P1
应用领域在P2P5
电气规格在P2P5
导航目录
AO4614B数据手册
Page:
of 7 Go
若手册格式错乱，请下载阅览PDF原文件
AO4614B
Symbol Min Typ Max Units
BV
DSS
-40 V
-1
T
J
=55°C -5
I
GSS
±100
nA
V
GS(th)
-1.7 -2 -3 V
I
D(ON)
-30 A
36 45
T
J
=125°C 52 65
50 63
g
FS
13 S
V
SD
-0.76 -1 V
I
S
-2 A
C
iss
750 940 1175 pF
C
oss
97 pF
C
rss
72 pF
R
g
14 Ω
Q
g
(-10V) 17 22 nC
Q
g
(-4.5V) 7.9 10 nC
Q
gs
3.4 nC
Q
gd
3.2 nC
t
D(on)
6.2 ns
t
r
8.4 ns
t
D(off)
44.8 ns
t
f
41.2 ns
t
rr
21 27
ns
Q
rr
14 nC
9
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
= -250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -40V, V
GS
=0V
µA
Gate-Body leakage current
V
DS
=0V, V
GS
= ±20V
Gate Threshold Voltage
V
DS
=V
GS
I
D
= -250µA
On state drain current
V
GS
= -10V, V
DS
= -5V
mΩ
V
DS
= -5V, I
D
= -5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4A
Diode Forward Voltage
I
S
= -1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
= -20V, f=1MHz
Gate resistance
Output Capacitance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
= -10V, V
DS
= -20V,
I
D
= -5A
V
GS
= -10V, V
DS
= -20V, R
L
=4Ω,
R
GEN
=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Total Gate Charge
Body Diode Reverse Recovery Time
I
F
= -5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
I
F
= -5A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the
t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The SOA curve provides a single pulse rating .
Rev1 : Jan 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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