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BC547C 数据手册 - Diotec Semiconductor
制造商:
Diotec Semiconductor
分类:
双极性晶体管
封装:
TO-92
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3D模型
符号图
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页面导航:
封装信息在P1
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BC547C数据手册
Page:
of 2 Go
若手册格式错乱，请下载阅览PDF原文件
BC546 ... BC549
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
V
CE
= 80 V, (B-E short)
V
CE
= 50 V, (B-E short)
V
CE
= 30 V, (B-E short)
BC546
BC547
BC548 / BC549
I
CES
I
CES
I
CES
–
–
–
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
V
CE
= 80 V, T
j
= 125°C, (B-E short)
V
CE
= 50 V, T
j
= 125°C, (B-E short)
V
CE
= 30 V, T
j
= 125°C, (B-E short)
BC546
BC547
BC548 / BC549
I
CES
I
CES
I
CES
–
–
–
–
–
–
4 µA
4 µA
4 µA
Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg.
2
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
V
CEsat
–
–
80 mV
200 mV
200 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
BEsat
V
BEsat
–
–
700 mV
900 mV
–
–
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
V
BE
V
BE
580 mV
–
660 mV
–
700 mV
720 mV
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz f
T
– 300 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz C
CBO
– 3.5 pF 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz C
EB0
–9 pF–
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 200 µA, R
G
= 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC546 / BC547
BC548 / BC549
F
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
< 200 K/W
1
)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC556 ... BC559
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC546A
BC547A
BC548A
BC546B
BC547B
BC548B
BC549B
BC547C
BC548C
BC549C
2 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 http://www.diotec.com/ © Diotec Semiconductor AG
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