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BCW65ALT1G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
双极性晶体管
封装:
SOT-23-3
描述:
BCW 系列 32 V 800 mA 表面贴装 NPN 硅 通用 晶体管 - SOT-23
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BCW65ALT1G数据手册
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© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1 Publication Order Number:
BCW65ALT1/D
BCW65ALT1G,
BCW65CLT1G
General Purpose Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
32 Vdc
Collector − Base Voltage V
CBO
60 Vdc
Emitter − Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
http://onsemi.com
Ex = Device Code
x = A or C
M = Date Code*
G =Pb−Free Package
MARKING DIAGRAMS
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
BCW65ALT1G SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Ex M G
G
COLLECTOR
3
1
BASE
2
EMITTER
BCW65CLT1G SOT−23
(Pb−Free)
3000/Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
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