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BCW65ALT1
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BCW65ALT1数据手册
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© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 4
1 Publication Order Number:
BCW65ALT1/D
BCW65ALT1, BCW65CLT1
General Purpose Transistor
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
32 Vdc
Collector − Base Voltage V
CBO
60 Vdc
EmitterBase Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
http://onsemi.com
Ex = Device Code
x = A or C
M = Date Code*
G = Pb−Free Package
MARKING DIAGRAMS
1
2
3
Device Package Shipping
ORDERING INFORMATION
BCW65ALT1 SOT−23 3000/Tape & Reel
BCW65ALT1G SOT−23
(Pb−Free)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Ex M G
G
COLLECTOR
3
1
BASE
2
EMITTER
BCW65CLT1 SOT−23 3000/Tape & Reel
BCW65CLT1G SOT−23
(Pb−Free)
3000/Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.

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