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BQ29209DRBR 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
电池管理芯片
封装:
VSON EP-8
描述:
Texas Instruments锂离子电池保护 IC 可检测各种故障条件，如过压、欠压、放电过电流和短路。 需要在没有监控器时提供独立保护或补充安全。### 电池管理，Texas Instruments
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BQ29209DRBR数据手册
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bq29200
bq29209
SLUSA52A –SEPTEMBER 2010–REVISED NOVEMBER 2010
www.ti.com
ELECTRICAL CHARACTERISTICS
Typical values stated where T
A
= 25°C and VDD = 7.2 V. Min/Max values stated where T
A
= –40°C to 110°C and VDD = 4 V
to 10 V (unless otherwise noted).
PARAMETER TEST CONDITION MIN NOM MAX UNIT
Overvoltage bq29209 4.30
V
PROTECT
detection V
bq29200 4.35
voltage
Overvoltage detection
V
HYS
200 300 400 mV
hysteresis
Overvoltage detection
V
OA
T
A
= 25°C –10 10 mV
accuracy
T
A
= 0°C to 60°C –0.4 0.4
Overvoltage threshold
V
OA_DRIFT
mV°/C
temperature drift
T
A
= –40°C to 110°C –0.6 0.6
T
A
= 0°C to 60°C
6.0 9.0 12.0
Note: Does not include external capacitor variation.
Overvoltage delay time
X
DELAY
s/µF
scale factor
T
A
= –40°C to 110°C
5.5 9.0 13.5
Note: Does not include external capacitor variation.
Overvoltage delay time
X
DELAY_CTM
(1)
scale factor in Customer 0.08 s/µF
Test Mode
Overvoltage detection
I
CD(CHG)
150 nA
charging current
Overvoltage detection
I
CD(DSG)
60 µA
discharging current
Overvoltage detection
V
CD
external capacitor 1.2 V
comparator threshold
I
CC
Supply current (VC2–VC1) = (VC1–GND) = 3.5 V (See Figure 4.) 3.0 6.0 µA
(VC2–VC1) or (VC1–GND) > V
PROTECT
,
6 8.25 9.5 V
VDD = 10 V, I
OH
= 0
(VC2–VC1) or (VC1–GND) = V
PROTECT
, VDD = V
PROTECT
,
1.75 2.5 V
I
OH
= –100 µA, T
A
= 0°C to 60°C
V
OUT
OUT pin drive voltage (VC2–VC1) and (VC1–GND) < V
PROTECT
,
200 mV
I
OL
= 100 µA, T
A
= 25°C
(VC2–VC1) and (VC1–GND) < V
PROTECT
,
0 10 mV
I
OL
= 0 µA, T
A
= 25°C
VC2 = VC1 = VDD = 4 V, I
OL
= 100 µA 200 mV
OUT = 1.75 V, (VC2–VC1) or (VC1–GND) = V
PROTECT
, VDD
I
OH
High-level output current –100 µA
= V
PROTECT
to 10 V, T
A
= 0°C to 60°C
OUT = 0.05 V, (VC2–VC1) or (VC1–GND) < V
PROTECT
, VDD
I
OL
Low-level output current 30 85 µA
= V
PROTECT
to 10 V, T
A
= 0°C to 60°C
High-level short-circuit OUT = 0 V, (VC2–VC1) = (VC1–GND) = V
PROTECT
I
OH_ZV
–8.0 mA
output current VDD = 4 to 10 V
Measured at VC1, (VC2–VC1) = (VC1–GND) = 3.5 V,
–0.2 0.2 µA
T
A
= 0°C to 60°C (See Figure 4.)
I
IN
Input current at VCx pins
Measured at VC2, (VC2–VC1) = (VC1–GND) = 3.5 V,
2.5 µA
T
A
= 0°C to 60°C (See Figure 4.)
Cell mismatch detection (VC2–VC1) versus (VC1–GND) and vice-versa when cell
V
MM_DET_ON
17 30 45 mV
threshold for turning ON balancing is enabled. VC2 = VDD = 7.6 V
Cell mismatch detection Delta between (VC2–VC1) and (VC1–GND) when cell
V
MM_DET_OFF
–9 0 9 mV
threshold for turning OFF balancing is disabled. VC2 = VDD = 7.6 V
Cell balance enable ON
V
CB_EN_ON
Active LOW pin at CB_EN 1 V
threshold
Cell balance enable OFF
V
CB_EN_OFF
Active HIGH at CB_EN 2.2 V
threshold
Cell balance enable ON
I
CB_EN
CB_EN = GND (See Figure 5.) 0.2 µA
input current
(1) Specified by design. Not 100% tested in production.
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