Datasheet 搜索 > Infineon（英飞凌） > BTS 118D 数据手册 > BTS 118D 数据手册 1/11 页
￥ 0
BTS 118D 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
TO-252-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
原理图在P5
封装尺寸在P9
功能描述在P1
电气规格在P3P4
导航目录
BTS 118D数据手册
Page:
of 11 Go
若手册格式错乱，请下载阅览PDF原文件
Datasheet 1 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Product Summary
Drain source voltage
V
DS
42 V
On-state resistance R
DS
(
on
)
100 mW
Nominal load current I
D
(
Nom
)
2.4 A
Clamping energy E
A
S
2 J
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
Ò
technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
â
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Com
p
lete
p
roduct s
p
ectrum and additional information htt
p
://www.infineon.com/hitfet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
P / PG-TO252-3-11
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
