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BTS118D_06
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BTS118D_06数据手册
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Datasheet 1 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Product Summary
Drain source voltage
V
DS
42 V
On-state resistance R
DS
(
on
)
100 mW
Nominal load current I
D
(
Nom
)
2.4 A
Clamping energy E
A
S
2 J
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
Ò
technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
â
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Com
p
lete
p
roduct s
p
ectrum and additional information htt
p
://www.infineon.com/hitfet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
P / PG-TO252-3-11
Downloaded from Elcodis.com electronic components distributor

BTS118D_06 数据手册

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11 页 / 0.23 MByte

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智能低侧功率开关 Smart Low Side Power Switch
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