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BUK7535-100A,127 数据手册 - Nexperia（安世）
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Nexperia（安世）
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TO-220-3
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BUK7535-100A,127数据手册
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BUK7535-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 21 February 2011 3 of 14
NXP Semiconductors
BUK7535-100A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage R
GS
=20kΩ - 100 V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
mb
=25°C; V
GS
= 10 V; see Figure 1;
see Figure 3
-41A
T
mb
=100°C; V
GS
= 10 V; see Figure 1 -29A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
see Figure 3
- 165 A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 2 - 149 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 41 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 165 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=25A; V
sup
≤ 100 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
= 25 °C; unclamped
-110mJ
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
T
mb
(°C)
0 20015050 100
03aa24
40
80
120
I
der
(%)
0
T
mb
(°C)
0 20015050 100
03na19
40
80
120
P
der
(%)
0
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