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BUK7535-100A127 其他数据使用手册 - NXP（恩智浦）
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BUK7535-100A127数据手册
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1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
BUK7535-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 21 February 2011 Product data sheet
TO-220AB
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1
; see Figure 3
--41A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --149W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
= 175 °C; see Figure 12;
see Figure 13
--88mΩ
V
GS
=10V; I
D
=25A;
T
j
= 25 °C; see Figure 12;
see Figure 13
- 2135mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=25A; V
sup
≤ 100 V;
R
GS
=50Ω; V
GS
=10V;
T
j(init)
= 25 °C; unclamped
--110mJ
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