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BZD27C51P-E3-08
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导航目录
  • 封装尺寸在P5
  • 型号编码规则在P1
  • 标记信息在P2P3
  • 焊接温度在P1
  • 功能描述在P7
  • 技术参数、封装参数在P1P7
  • 电气规格在P1P2P3
BZD27C51P-E3-08数据手册
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of 7 Go
若手册格式错乱,请下载阅览PDF原文件
BZD27C3V6P to BZD27C200P
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 29-Nov-11
1
Document Number: 85810
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Zener Diodes with Surge Current Specification
FEATURES
Sillicon planar Zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering: 260 °C/10 s at terminals
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Notes
(1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2)
T
J
= 25 °C prior to surge
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
V
Z
range nom. 3.6 to 200 V
Test current I
ZT
5 to 100 mA
V
Z
specification Pulse current
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZD27C3V6P to BZD27C200P
BZD27C3V6P to
BZD27C200P-series-GS08
3000 per 7" reel (8 mm tape) 15 000/box
BZD27C3V6P to BZD27C200P
BZD27C3V6P to
BZD27C200P-series-GS18
10 000 per 13" reel (8 mm tape) 10 000/box
PACKAGE
PACKAGE NAME WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING
CONDITIONS
DO-219AB (SMF) 15 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
T
L
= 80 °C P
tot
2300 mW
T
A
= 25 °C
(1)
P
tot
800 mW
Non repetitive peak surge power
dissipation
(2)
100 μs square pulse P
ZSM
300 W
10/1000 μs waveform
(BZD27-C7V5P to BZD27-C100P)
P
RSM
150 W
10/1000 μs waveform
(BZD27-C100P to BZD27-C200P)
P
RSM
100 W
Junction to lead R
thJL
30 K/W
Junction to ambient air
Mounted on epoxy-glass PCB with 3 mm x
3 mm Cu pads ( 40 μm thick)
R
thJA
180 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
- 55 to + 150 °C

BZD27C51P-E3-08 数据手册

Vishay Semiconductor(威世)
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Vishay Semiconductor(威世)
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