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BZD27C51P-M-18
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  • 标记信息在P2P3
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  • 焊接温度在P1
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BZD27C51P-M-18数据手册
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BZD27C Series
www.vishay.com
Vishay Semiconductors
Rev. 1.4., 15-Oct-15
1
Document Number: 85153
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Zener Diodes with Surge Current Specification
FEATURES
Sillicon planar Zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Meets JESD 201 class 2 whisker test
ESD capability according to AEC-Q101:
human body model: > 8 kV
machine model: > 800 V
Wave and reflow solderable
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-HE3 - RoHS-compliant, automotive grade
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Notes
(1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2)
T
J
= 25 °C prior to surge
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
V
Z
range nom. 3.6 to 200 V
Test current I
ZT
5 to 100 mA
V
BR
7 to 188 V
V
WM
6.2 to 160 V
P
PPM
150 W
T
J
max. 175 °C
V
Z
specification Pulse current
Int. construction Single
Polarity Uni-directional
17249
Available
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZD27C Series
BZD27C3V6P-E3-08 to BZD27C200P-E3-08
3000 per 7" reel (8 mm tape) 30 000/box
BZD27C3V6P-HE3-08 to BZD27C200P-HE3-08
BZD27C3V6P-E3-18 to BZD27C200P-E3-18
10 000 per 13" reel (8 mm tape) 50 000/box
BZD27C3V6P-HE3-18 to BZD27C200P-HE3-18
PACKAGE
PACKAGE NAME WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
WHISKER TEST
ACC. JESD 201
SOLDERING CONDITIONS
DO-219AB (SMF) 15 mg UL 94 V-0
MSL level 1
(according J-STD-020)
class 2 Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
T
L
= 105 °C P
tot
2300 mW
T
A
= 30 °C
(1)
P
tot
800 mW
Non repetitive peak surge power dissipation
(2)
100 μs square pulse P
ZSM
300 W
10/1000 μs waveform P
RSM
150 W
Junction to lead R
thJL
30 K/W
Junction to ambient air
Mounted on epoxy-glass PCB with
3 mm x 3 mm Cu pads
( 40 μm thick)
R
thJA
180 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
-65 to +175 °C
Operating temperature range T
op
-65 to +175 °C

BZD27C51P-M-18 数据手册

Vishay Semiconductor(威世)
7 页 / 0.1 MByte
Vishay Semiconductor(威世)
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