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BZV55-C4V3,115 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
齐纳二极管
封装:
SOD-80
描述:
500mW，BZV55 系列，NXP SemiconductorsNXP 500mW 表面安装 (SMT) 齐纳二极管，具有较宽的击穿电压范围。### 齐纳二极管，NXP Semiconductors
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BZV55-C4V3,115数据手册
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1. Product profile
1.1 General description
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C
Surface-Mounted Device (SMD) packages. The diodes are available in the normalized
E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
1.2 Features and benefits
1.3 Applications
General regulation functions
1.4 Quick reference data
[1] t
p
=100s; square wave; T
j
=25C prior to surge
2. Pinning information
[1] The marking band indicates the cathode.
BZV55 series
Voltage regulator diodes
Rev. 5 — 26 January 2011 Product data sheet
Non-repetitive peak reverse power
dissipation: 40 W
Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
Total power dissipation: 500 mW Low differential resistance
Two tolerance series: 2%and5% Small hermetically sealed glass
SMD package
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=10mA - - 0.9 V
P
ZSM
non-repetitive peak
reverse power dissipation
[1]
--40W
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode
[1]
2 anode
ka
006aaa152
2
1
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