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BZV55-C4V3,115 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
齐纳二极管
封装:
SOD-80
描述:
500mW，BZV55 系列，NXP SemiconductorsNXP 500mW 表面安装 (SMT) 齐纳二极管，具有较宽的击穿电压范围。### 齐纳二极管，NXP Semiconductors
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BZV55-C4V3,115数据手册
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BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 26 January 2011 6 of 13
NXP Semiconductors
BZV55 series
Voltage regulator diodes
[1] f = 1 MHz; V
R
=0V
[2] t
p
= 100 s; square wave; T
j
=25C prior to surge
Table 9. Characteristics per type; BZV55-B27 to BZV55-C75
T
j
=25
C unless otherwise specified.
BZV55-
xxx
Sel Working
voltage
V
Z
(V)
Differential resistance
r
dif
()
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=2mA I
Z
=0.5mA I
Z
=2mA I
Z
=2mA
Min Max Typ Max Typ Max Min Typ Max Max Max
27 B 26.5 27.5 65 300 25 80 18.0 22.7 25.3 50 1.0
C 25.1 28.9
30 B 29.4 30.6 70 300 30 80 20.6 25.7 29.4 50 1.0
C 28.0 32.0
33 B 32.3 33.7 75 325 35 80 23.3 28.7 33.4 45 0.9
C 31.0 35.0
36 B 35.3 36.7 80 350 35 90 26.0 31.8 37.4 45 0.8
C 34.0 38.0
39 B 38.2 39.8 80 350 40 130 28.7 34.8 41.2 45 0.7
C 37.0 41.0
43 B 42.1 43.9 85 375 45 150 31.4 38.8 46.6 40 0.6
C 40.0 46.0
47 B 46.1 47.9 85 375 50 170 35.0 42.9 51.8 40 0.5
C 44.0 50.0
51 B 50.0 52.0 90 400 60 180 38.6 46.9 57.2 40 0.4
C 48.0 54.0
56 B 54.9 57.1 100 425 70 200 42.2 52.0 63.8 40 0.3
C 52.0 60.0
62 B 60.8 63.2 120 450 80 215 58.8 64.4 71.6 35 0.3
C 58.0 66.0
68 B 66.6 69.4 150 475 90 240 65.6 71.7 79.8 35 0.25
C 64.0 72.0
75 B 73.5 76.5 170 500 95 255 73.4 80.2 88.6 35 0.2
C 70.0 79.0
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