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CSD18531Q5A 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
PowerTDFN-8
描述:
TEXAS INSTRUMENTS CSD18531Q5A 晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0035 ohm, 10 V, 1.8 V
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CSD18531Q5A数据手册
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V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-State Resistance (m:)
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
D007
T
C
= 25° C, I
D
= 22 A
T
C
= 125° C, I
D
= 22 A
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
0 5 10 15 20 25 30 35
0
2
4
6
8
10
D004
I
D
= 22 A
V
DS
= 30 V
1
D
2
D
3
D
4
D
D
5
G
6S
7
S
8S
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Reference
Design
CSD18531Q5A
SLPS321E –JUNE 2012–REVISED AUGUST 2015
CSD18531Q5A 60 V N-Channel NexFET™ Power MOSFET
1 Features
Product Summary
1
• Ultra-Low Q
g
and Q
gd
T
A
= 25°C TYPICAL VALUE UNIT
• Low Thermal Resistance
V
DS
Drain-to-source voltage 60 V
• Avalanche Rated
Q
g
Gate charge total (10 V) 36 nC
Q
gd
Gate charge gate-to-drain 5.9 nC
• Logic Level
V
GS
= 4.5 V 4.4 mΩ
• Pb Free Terminal Plating
R
DS(on)
Drain-to-source on-resistance
V
GS
= 10 V 3.5 mΩ
• RoHS Compliant
V
GS(th)
Threshold voltage 1.8 V
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
Ordering Information
(1)
DEVICE QTY MEDIA PACKAGE SHIP
2 Applications
CSD18531Q5A 2500 13-Inch Reel SON 5 mm × Tape
6 mm Plastic and
• DC-DC Conversion
CSD18531Q5AT 250 7-Inch Reel
Package Reel
• Secondary Side Synchronous Rectifier
(1) For all available packages, see the orderable addendum at
• Battery Motor Control
the end of the data sheet.
Absolute Maximum Ratings
3 Description
T
A
= 25°C VALUE UNIT
This 60-V, 3.5-mΩ, 5 mm × 6 mm NexFET™ power
V
DS
Drain-to-source voltage 60 V
MOSFET is designed to minimize losses in power
conversion applications.
V
GS
Gate-to-source voltage ±20 V
Continuous drain current (package limited) 100
TOP VIEW
Continuous drain current (silicon limited), T
C
I
D
134 A
= 25°C
Continuous drain current
(1)
19
I
DM
Pulsed drain current
(2)
370 A
Power dissipation
(1)
3.1
P
D
W
Power dissipation, T
C
= 25°C 156
T
J
Operating junction –55 to 150 °C
T
stg
Storage temperature –55 to 150 °C
Avalanche energy, single pulse
E
AS
224 mJ
I
D
= 67 A, L = 0.1 mH, R
G
= 25 Ω
(1) Typical R
θJA
= 40°C/W on a 1 inch
2
, 2 oz. Cu pad on a
0.06 inch thick FR4 PCB.
(2) Max R
θJC
= 1°C/W, pulse duration ≤100 μs, duty cycle ≤1%
R
DS(on)
vs V
GS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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