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CSD19532Q5B 数据手册 - TI（德州仪器）
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N 通道 NexFET 功率 MOSFET，CSD19532Q5B
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CSD19532Q5B数据手册
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CSD19532Q5B
SLPS414A –DECEMBER 2013–REVISED JUNE 2014
www.ti.com
Table of Contents
6.1 Trademarks............................................................... 7
1 Features.................................................................. 1
6.2 Electrostatic Discharge Caution................................ 7
2 Applications ........................................................... 1
6.3 Glossary.................................................................... 7
3 Description............................................................. 1
7 Mechanical, Packaging, and Orderable
4 Revision History..................................................... 2
Information............................................................. 8
5 Specifications......................................................... 3
7.1 Q5B Package DimensionsUpdated mechanical
5.1 Electrical Characteristics.......................................... 3
drawing ..................................................................... 9
5.2 Thermal Information.................................................. 3
7.2 Recommended PCB Pattern................................... 10
5.3 Typical MOSFET Characteristics.............................. 4
7.3 Recommended Stencil Pattern ............................... 10
6 Device and Documentation Support.................... 7
7.4 Q5B Tape and Reel Information............................. 11
4 Revision History
Changes from Original (December 2013) to Revision A Page
• Added small reel option to ordering information table ........................................................................................................... 1
• Increased silicon limit for continuous drain current to 140 A ................................................................................................. 1
• Increased max pulsed current to 400 A ................................................................................................................................ 1
• Added max power rating when the case temperature is held to 25°C .................................................................................. 1
• Updated pulsed current conditions to specify Max R
θJC
........................................................................................................ 1
• Updated Figure 10 ................................................................................................................................................................. 6
• Updated mechanical drawing ................................................................................................................................................ 9
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