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CSD19537Q3T 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
VSON-8
描述:
TEXAS INSTRUMENTS CSD19537Q3T 晶体管, MOSFET, NexFET™, N沟道, 50 A, 100 V, 0.0121 ohm, 10 V, 3 V
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CSD19537Q3T数据手册
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Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
0 2 4 6 8 10 12 14 16
0
1
2
3
4
5
6
7
8
9
10
D004
I
D
= 10 A
V
DS
= 50 V
V
GS
- Gate-To-Source Voltage (V)
R
DS(on)
- On-State Resistance (m:)
0 2 4 6 8 10 12 14 16 18 20
0
5
10
15
20
25
30
35
40
D007
T
C
= 25° C, I
D
= 10 A
T
C
= 125° C, I
D
= 10 A
1
D
2
D
3
D
4
D
D
5
G
6S
7
S
8S
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CSD19537Q3
SLPS549 –AUGUST 2015
CSD19537Q3 100 V N-Channel NexFET™ Power MOSFET
1 Features
Product Summary
1
• Ultra-Low Q
g
and Q
gd
T
A
= 25°C TYPICAL VALUE UNIT
• Low Thermal Resistance
V
DS
Drain-to-Source Voltage 100 V
• Avalanche Rated
Q
g
Gate Charge Total (10 V) 16 nC
Q
gd
Gate Charge Gate to Drain 2.9 nC
• Pb-Free Terminal Plating
V
GS
= 6 V 13.8 mΩ
• RoHS Compliant
R
DS(on)
Drain-to-Source On-Resistance
V
GS
= 10 V 12.1 mΩ
• Halogen Free
V
GS(th)
Threshold Voltage 3.0 V
• SON 3.3 mm × 3.3 mm Plastic Package
.
2 Applications
Ordering Information
(1)
• Primary Side Isolated Converters
DEVICE MEDIA QTY PACKAGE SHIP
CSD19537Q3 13-Inch Reel 2500
• Motor Control
SON 3.3 x 3.3 mm Tape and
Plastic Package Reel
CSD19537Q3T 13-Inch Reel 250
3 Description
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
This 100 V, 12.1 mΩ, SON 3.3 mm × 3.3 mm
NexFET™ power MOSFET is designed to minimize
Absolute Maximum Ratings
losses in power conversion applications.
T
A
= 25°C VALUE UNIT
Top View
V
DS
Drain-to-Source Voltage 100 V
V
GS
Gate-to-Source Voltage ±20 V
Continuous Drain Current (Package limited) 50
Continuous Drain Current (Silicon limited),
I
D
53 A
T
C
= 25°C
Continuous Drain Current
(1)
9.7
I
DM
Pulsed Drain Current
(2)
219 A
Power Dissipation
(1)
2.8
P
D
W
Power Dissipation, T
C
= 25°C 83
T
J
, Operating Junction Temperature,
–55 to 150 °C
.
T
stg
Storage Temperature
Avalanche Energy, single pulse
.
E
AS
55 mJ
I
D
= 33 A, L = 0.1 mH, R
G
= 25 Ω
(1) Typical R
θJA
= 45°C/W on a 1 inch
2
, 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
(2) Max R
θJC
= 1.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%
R
DS(on)
vs V
GS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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