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CSD95377Q4M
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CSD95377Q4M数据手册
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9
CSD95377Q4M
www.ti.com.cn
ZHCSEI7 DECEMBER 2015
Copyright © 2015, Texas Instruments Incorporated
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The Power Stage CSD95377Q4M is a highly-optimized design for synchronous buck applications using NexFET
devices with a 5 V gate drive. The Control FET and Sync FET silicon are parametrically tuned to yield the lowest
power loss and highest system efficiency. As a result, a rating method is used that is tailored toward a more
systems-centric environment. The high-performance gate driver IC integrated in the package helps minimize the
parasitics and results in extremely fast switching of the power MOSFETs. System level performance curves such
as Power Loss, SOA, and normalized graphs allow engineers to predict the product performance in the actual
application.
8.2 Typical Application
Figure 3. Application Schematic

CSD95377Q4M 数据手册

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CSD95377Q4 数据手册

TI(德州仪器)
20V 35A SON 3.5 x 4.5mm 同步降压 NexFET™ 功率级 8-VSON-CLIP -40 to 150
TI(德州仪器)
TEXAS INSTRUMENTS  CSD95377Q4MT  芯片, 同步降压稳压器, FET, 功率级, 5.5V, VSON-8 新
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