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DG417LDY-E3 数据手册 - VISHAY（威世）
制造商:
VISHAY（威世）
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模拟开关芯片
封装:
SOIC
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精密单片低电压CMOS模拟开关 Precision Monolithic Low-Voltage CMOS Analog Switches
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DG417LDY-E3数据手册
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若手册格式错乱，请下载阅览PDF原文件
Document Number: 71763
S-60104–Rev. D, 23-Jan-06
www.vishay.com
5
Vishay Siliconix
DG417L/418L/419L
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (SINGLE SUPPLY 3 V)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
V
L
= 3 V, V
IN
= 2.0 V, 0.4 V
f
Temp
b
Typ
c
A Suffix Limits
- 55 to 125 °C
D Suffix Limits
- 40 to 85 °C
Unit
Min
d
Max
d
Min
d
Max
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0303V
On-Resistance
r
ON
V+ = 2.7 V, V- = 0 V
I
NO
, I
NC
= 5 mA, V
COM
= 0.5, 2.2 V
Room
Full
47
70
80
70
75
Ω
Switch Off
Leakage Current
a
I
NO(off)
I
NC(off)
V+ = 3.3 , V- = 0 V
V
COM
= 1, 2 V, V
NO
, V
NC
= 2, 1 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
nA
I
COM(off)
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Channel On
Leakage Current
a
I
COM(on)
V+ = 3.3 V, V- = 0 V
V
NO
, V
NC
= V
COM
= 1, 2 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Digital Control
Input Current
a
I
INL
or I
INH
Full 0.005 - 1.5 1.5 - 1 1 µA
Dynamic Characteristics
Tu r n - O n T i m e
t
ON
R
L
= 300 Ω, C
L
= 35 pF
V
NO
, V
NC
= 1.5 V, See Figure 2
Room
Full
65 75
95
75
85
ns
Turn-Off Time
t
OFF
Room
Full
26 41
45
41
43
Break-Before-Make Time
Delay
t
D
DG419L Only, V
NO
, V
NC
= 1.5 V
R
L
= 300 Ω, C
L
= 35 pF
Room 33
Charge Injection
e
Q
INJ
V
g
= 0 V, R
g
= 0 Ω, C
L
= 10 nF
Room 1 pC
Off-Isolation
e
OIRR
R
L
= 50 Ω, C
L
= 5 pF , f = 1 MHz
Room - 71
dB
Channel-to-Channel
Crosstalk
e
X
TALK
Room - 77
Source Off Capacitance
e
C
NO(off)
C
NC(off)
f = 1 MHz
Room 5.6
pF
Channel On Capacitance
e
C
D(on)
Room 16
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