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FDPF16N50 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-220-3
描述:
FAIRCHILD SEMICONDUCTOR FDPF16N50 晶体管, MOSFET, N沟道, 16 A, 500 V, 380 mohm, 10 V, 5 V
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FDPF16N50数据手册
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©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDP16N50 / FDPF16N50 Rev. B
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
April 2007
UniFET
TM
FDP16N50 / FDPF16N50
500V N-Channel MOSFET
Features
• 16A, 500V, R
DS(on)
= 0.38Ω @V
GS
= 10 V
• Low gate charge ( typical 32 nC)
•Low C
rss
( typical 20 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol Parameter FDP16N50 FDPF16N50 Unit
V
DSS
Drain-Source Voltage 500 V
I
D
Drain Current - Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
16
9.6
16 *
9.6 ∗
A
A
I
DM
Drain Current - Pulsed
(Note 1)
64 64 ∗ A
V
GSS
Gate-Source voltage ±30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
780 mJ
I
AR
Avalanche Current (Note 1) 16 A
E
AR
Repetitive Avalanche Energy (Note 1) 20 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
200
1.59
38.5
0.3
W
W/°C
T
J,
T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300 °C
Symbol Parameter FDP16N50 FDPF16N50 Unit
R
θJC
Thermal Resistance, Junction-to-Case 0.63 3.3 °C/W
R
θCS
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
* Drain current limited by maximum junction temperature
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