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FDS9945 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOIC-8
描述:
FAIRCHILD SEMICONDUCTOR FDS9945.. 双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 100 mohm, 10 V, 2.5 V
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FDS9945数据手册
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February 2001
2001 Fairchild Semiconductor Corporation FDS9945 Rev B(W)
FDS9945
60V N-Channel PowerTrench
MOSFET
General Description
These N Channel Logic Level MOSFET have been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
The MOSFET feature faster switching and lower gate
charge than other MOSFET with comparable RDS(on)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 3.5 A, 60 V. R
DS(ON)
= 0.100Ω @ V
GS
= 10 V
R
DS(ON)
= 0.200Ω @ V
GS
= 4.5V
• Optimized for use in switching DC/DC converters
with PWM controllers
• Very fast switching
• Low gate charge.
S
D
S
S
SO-8
D
D
D
G
D2
D2
D1
D1
S2
G2
S1
G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 60 V
V
GSS
Gate-Source Voltage ±20 V
I
D
Drain Current – Continuous (Note 1a) 3.5 A
– Pulsed 10
Power Dissipation for Single Operation (Note 1a) 2
(Note 1b)
1.6
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +175 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 (steady state), 50 (10 sec) °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1c) 135 °C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS9945 FDS9945 13’’ 12mm 2500 units
FDS9945
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