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FQPF19N10 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
TO-220-3
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FQPF19N10数据手册
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FQPF19N10 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQPF19N10 Rev. C1
www.fairchildsemi.com
1
FQPF19N10
Description
This N-Channel enhancement mode power MOSFET
is produc
ed using Fairchild Semiconductor’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche
energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC
motor control, and variable switching power
applications.
Features
N-Channel QFET
®
MOSFET
100 V, 13.6 A, 100 mΩ
TO-220F
G
D
S
G
S
D
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQPF19N10 Unit
V
DSS
Drain-Source Voltage 100 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
13.6 A
- Continuous (T
C
= 100°C)
9.6 A
I
DM
Drain Current - Pulsed
(Note 1)
54.4 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
220 mJ
I
AR
Avalanche Current
(Note 1)
13.6 A
E
AR
Repetitive Avalanche Energy
(Note 1)
3.8 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
6.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
38 W
- Derate above 25°C 0.25 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter
FQPF19N10 Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 3.95 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W
October 2013
•
13.6 A, 100 V, R
DS(on)
=100 mΩ(Max.) @V
GS
=10 V, I
D
=6.8 A
•
Low Gate Charge (Typ. 19 nC)
•
Low Crss (Typ. 32 pF)
•
100% Avalanche Tested
•
175°C Maximum Junction Temperature Rating
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