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FQPF19N20 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
TO-220-3
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FQPF19N20数据手册
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November 2013
FQPF19N20 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQPF19N20 Rev. C1
www.fairchildsemi.com
1
FQPF19N20
N-Channel QFET
®
MOSFET
200 V, 11.8 A, 150 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
• 11.8 A, 200 V, R
DS(on)
= 150 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 5.9 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
TO-220F
G
D
S
G
S
D
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQPF19N20 Unit
V
DSS
Drain-Source Voltage 200 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
11.8 A
- Continuous (T
C
= 100°C)
7.5 A
I
DM
Drain Current - Pulsed
(Note 1)
48 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
250 mJ
I
AR
Avalanche Current
(Note 1)
11.8 A
E
AR
Repetitive Avalanche Energy
(Note 1)
5.0 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
5.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
50 W
- Derate above 25°C 0.4 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
300 °C
Symbol Parameter FQPF19N20 Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 2.5 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W
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