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FQPF19N10L 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
TO-220-3
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FQPF19N10L数据手册
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©2000 Fairchild Semiconductor International
August 2000
Rev. A, August 2000
FQPF19N10L
QFET
QFETQFET
QFET
TM
FQPF19N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as high efficiency
switching DC/DC converters, and DC motor control.
Features
• 13.6A, 100V, R
DS(on)
= 0.1Ω @V
GS
= 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQPF19N10L Units
V
DSS
Drain-Source Voltage 100 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
13.6 A
- Continuous (T
C
= 100°C)
9.6 A
I
DM
Drain Current - Pulsed
(Note 1)
54.4 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
220 mJ
I
AR
Avalanche Current
(Note 1)
13.6 A
E
AR
Repetitive Avalanche Energy
(Note 1)
3.8 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
6.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
38 W
- Derate above 25°C 0.25 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 3.95 °C/W
R
θCS
Thermal Resistance, Case-to-Sink 0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
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D
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TO-220F
FQPF Series
G
S
D
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