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FSA2567 数据手册 - ON Semiconductor（安森美）
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FSA2567数据手册
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4
FSA2567 — Low-Power, Dual SIM Card Analog Switch
DC Electrical Characteristics
All typical values are at 25°C, 3.3 V V
CC
unless otherwise specified.
Symbol Parameter Conditions V
CC
(V)
T
A
=- 40ºC to +85ºC
Units
Min. Typ. Max.
V
IK
Clamp Diode Voltage I
IN
= -18 mA 2.7 -1.2 V
V
IH
Input Voltage High
1.65 to 2.3 1.1
V 2.7 to 3.6 1.3
4.3 1.7
V
IL
Input Voltage Low
1.65 to 2.3 0.4
V 2.7 to 3.6 0.5
4.3 0.7
I
IN
Control Input Leakage V
SW
= 0 to V
CC
4.3 -1 1 µA
I
nc(off),
I
no(off),
Off State Leakage
nRST, nDAT, nCLK, nV
SIM
= 0.3 V
or 3.6 V
Figure 10
4.3 -60 60 nA
R
OND
Data Path Switch On
Resistance
(3)
V
SW
=
0, 1.8 V, I
ON
= -20 mA
Figure 9
1.8 7.0 12.0
Ω
V
SW
=
0, 2.3 V, I
ON
= -20 mA
Figure 9
2.7 6.0 10.0
R
ONV
V
SIM
Sw itch
On Resistance
(3)
V
SW
=
0, 1.8V, I
ON
= -100mA
Figure 9
1.8 0.5 0.7
Ω
V
SW
=
0, 2.3 V, I
ON
= -100 mA
Figure 9
2.7 0.4 0.6
∆R
OND
Data Path Delta
On Resistance
(4)
V
SW
=
0 V, I
ON
=
-20 mA 2.7 0.2 Ω
I
CC
Quiescent Supply
Current
V
CNTRL
=
0 or V
CC
, I
OUT
= 0 4.3 1.0 µA
I
CCT
Increase in I
CC
Current
Per Control Voltage
and V
CC
V
CNTRL
=
2.6 V, V
CC
= 4.3 V 4.3 5.0 10.0 µA
V
CNTRL
=
1.8 V, V
CC
= 4.3 V 4.3 7.0 15.0 µA
Notes:
3. Measured by the voltage drop between nDAT, nRST, nCLK and relative common port pins at the indicated current
through the switch. On resistance is determined by the lower of the voltage on the relative ports.
4. Guaranteed by characterization.
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