Web Analytics
Datasheet 搜索 > 放大器IC与RF模块 > ADI(亚德诺) > HMC659LC5TR 数据手册 > HMC659LC5TR 数据手册 3/10 页
HMC659LC5TR
1.58
导航目录
  • 引脚图在P8
  • 典型应用电路图在P3
  • 原理图在P8
  • 封装尺寸在P7
  • 标记信息在P7
  • 功能描述在P3P8
  • 技术参数、封装参数在P6
  • 应用领域在P3
HMC659LC5TR数据手册
Page:
of 10 Go
若手册格式错乱,请下载阅览PDF原文件
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
1
HMC659LC5
v04.0614
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
General Description
Features
Functional Diagram
Typical Applications
The HMC659LC5 is a GaAs MMIC pHEMT
Distributed Power Amplier which is housed in a
leadless 5 x 5 mm RoHS compliant ceramic SMT
package operating between DC and 15 GHz. The
amplier provides 19 dB of gain, +35 dBm output IP3
and +27.5 dBm of output power at 1 dB gain
compression, while requiring 300mA from a +8V
supply. Gain atness is excellent at ±1.4 dB from
DC - 15 GHz making the HMC659LC5 ideal for EW,
ECM, Radar and test equipment applications. The
HMC659LC5 amplier I/Os are internally matched
to 50 Ohms with no external components. The
HMC659LC5 is compatible with high volume surface
mount manufacturing techniques.
P1dB Output Power: +27.5 dBm
Gain: 19 dB
Output IP3: +35 dBm
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm
2
The HMC659LC5 wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Electrical Specications, T
A
= +25 °C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range DC - 6 6 - 11 11 - 15 GHz
Gain 16 19 15 18 14 17 dB
Gain Flatness ± 0.7 ± 0.4 ± 0.7 dB
Gain Variation Over Temperature 0.015 0.019 0.022 dB/ °C
Input Return Loss 20 18 17 dB
Output Return Loss 19 20 15 dB
Output Power for 1 dB Compression (P1dB) 23.5 26.5 24.5 27. 5 23.5 26.5 dBm
Saturated Output Power (Psat) 28.0 28.5 27. 5 dBm
Output Third Order Intercept (IP3) 35 32 29 dBm
Noise Figure 3.0 2.5 3.5 dB
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.)
300 300 300 mA
*Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.

HMC659LC5TR 数据手册

ADI(亚德诺)
10 页 / 0.74 MByte
ADI(亚德诺)
16 页 / 0.78 MByte
ADI(亚德诺)
9 页 / 0.18 MByte

HMC659LC5 数据手册

ADI(亚德诺)
ANALOG DEVICES  HMC659LC5  芯片, 射频放大器, 17DB, 15GHZ, 8V, HQFN-32
Hittite
射频放大器 pow amp SMT, DC - 15 GHz
ADI(亚德诺)
射频放大器, GaAs PHEMT, 17 dB增益/3.5 dB噪声, DC至15 GHz, 8 V/300 mA电源, LFCSP-32
ADI(亚德诺)
射频放大器 pow amp SMT, DC - 15 GHz
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件