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HMC995LP5GE 数据手册 - ADI（亚德诺）
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ADI（亚德诺）
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放大器IC与RF模块
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QFN-24
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HMC995LP5GE数据手册
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
HMC 995LP5GE
V0 2.1112
GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT
WITH POWER DETECTOR, 12 - 16 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1-3, 9, 14
17-19, 23, 24
N/C
These pins are not connected internally, however all data
shown herein was measured with these pins connected to
RF/DC ground externally.
4 RFIN This pad is DC coupled and matched to 50 Ohms.
5, 15 GND
These pins and package bottom must be
connected to RF/DC ground.
6-8
Vgg1, Vgg2
Vgg3
Gate control for amplier. External bypass capacitors of
100pF, 10nF and 4.7uF are required. Please follow “MMIC
Amplier Biasing Proceedure” App Note.
10, 11
20-22
Vdd1, Vdd2,
Vdd3, Vdd4, Vdd5
Drain bias voltage for the amplier. External bypass
capacitors of 100pF, 10nF and 4.7µF capacitors are
required.
12 Vref
DC voltage of diode biased through external resistor, used
for temperature compensation of Vdet. See Application
Circuit.
13 Vdet
DC voltage representing RF output power rectied by diode
which is biased through an external resistor. See Appilation
Circuit.
16 RFOUT This pin is DC coupled and matched to 50 Ohms.
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