Datasheet 搜索 > IGBT晶体管 > Infineon（英飞凌） > IGB03N120H2ATMA1 数据手册 > IGB03N120H2ATMA1 数据手册 1/12 页
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IGB03N120H2ATMA1 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
IGBT晶体管
封装:
TO-263-3
描述:
INFINEON IGB03N120H2ATMA1 单晶体管, IGBT, 3 A, 2.8 V, 62.5 W, 1.2 kV, TO-263, 3 引脚
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IGB03N120H2ATMA1数据手册
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IGB03N120H2
Power Semiconductors
1 Rev. 2.4 Oct. 07
HighSpeed 2-Technology
• Designed for frequency inverters for washing
machines, fans, pumps and vacuum cleaners
• 2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- E
off
optimized for I
C
=3A
• Qualified according to JEDEC
2
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
CE
I
C
E
off
T
j
Marking Package
IGB03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO263-3-2
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CE
1200 V
Triangular collector current
T
C
= 25°C, f = 140kHz
T
C
= 100°C, f = 140kHz
I
C
9.6
3.9
Pulsed collector current, t
p
limited by T
jmax
I
Cpuls
9.9
Turn off safe operating area
V
CE
≤ 1200V, T
j
≤ 150°C
-
9.9
A
Gate-emitter voltage
V
GE
±20
V
Power dissipation
T
C
= 25°C
P
tot
62.5 W
Operating junction and storage temperature
T
j
, T
stg
-40...+150
Soldering temperature (reflow soldering, MSL1) - 245
°C
2
J-STD-020 and JESD-022
G
C
E
PG-TO263-3-2
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